ウエダ　ヨシオ   Ueda Yoshio   上田　良夫    所属   追手門学院大学  理工学部 電気電子工学科    職種   教授
言語種別	英語
発行・発表の年月	2015/08
形態種別	論文
査読	査読あり
標題	Gaseous tritium uptake by C deposition layer on tungsten
執筆形態	共著・編著（代表編著を除く）
掲載誌名	JOURNAL OF NUCLEAR MATERIALS
出版社・発行元	ELSEVIER SCIENCE BV
巻・号・頁	463,pp.1017-1020
国際共著	国際共著
著者・共著者	Y. Hamaji,H. T. Lee,Y. Torikai,K. Sugiyama,Y. Ueda
概要	Tritium (T) uptake by exposure to gaseous T on deuterated C deposition layer on W was investigated. The C deposition layer were prepared by mixed D and C ion irradiation. The specimens were exposed to D an T mixed gas at 423 and 573 K. The additional T retention by gas exposure at 573 K was about 4 times higher than that by gas exposure at 423 K. Further heating from 573 to 673 K in vacuum after the gas exposure, resulted in more than 70% of retained T stayed after heating at 673 K. That should be due to changing of nature of trap sites in C deposition layer during experiments. These results suggest that additional T trapped in such trap sites require higher temperature to remove retained T in such trap sites. (C) 2014 Elsevier B.V. All rights reserved.
DOI	10.1016/j.jnucmat.2014.11.052
ISSN	0022-3115/1873-4820