ウエダ ヨシオ
Ueda Yoshio
上田 良夫 所属 追手門学院大学 理工学部 電気電子工学科 職種 教授 |
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言語種別 | 英語 |
発行・発表の年月 | 1995/04 |
形態種別 | 論文 |
査読 | 査読あり |
標題 | FLUX DEPENDENCE OF SPUTTERING YIELD FOR C AND B4C BY HIGH-FLUX NEUTRAL BEAM |
執筆形態 | 共著・編著(代表編著を除く) |
掲載誌名 | JOURNAL OF NUCLEAR MATERIALS |
掲載区分 | 国外 |
出版社・発行元 | ELSEVIER SCIENCE BV |
巻・号・頁 | 220,pp.886-889 |
著者・共著者 | Y OHTSUKA,M ISOBE,K NAKANO,Y UEDA,S GOTO,M NISHIKAWA |
概要 | The sputtering yields of isotropic graphite PD330S and conversion B4C irradiated by high flux neutral beam have been investigated. The specification of the beam is as follows: deuterium flux from 2 x 10(21) to 1 X 10(22)/m(2) s with 9% of oxygen and acceleration energy of 5 keV. The samples are irradiated at a normal incidence in the temperature range from 520 to 1070 K. For a flux of 1 x 10(22)/m(2) s, the chemical sputtering yield of PD330S is suppressed in comparison with previous data for low flux beam irradiation experiments and a local peak of sputtering yield appears between 870 and 970 K. Moreover as the incident flux is increased, the sputtering yield at 770 K has a large variation and a maximum value in 5 x 10(21)/m(2) s for PD330S. The sputtering yield of conversion B4C is 50 similar to 60% smaller than that of PD330S at a temperature of 970 K. |
DOI | 10.1016/0022-3115(94)00604-0 |
ISSN | 0022-3115 |
NAID | 30002370097 |