ウエダ　ヨシオ   Ueda Yoshio   上田　良夫    所属   追手門学院大学  理工学部 電気電子工学科    職種   教授
言語種別	英語
発行・発表の年月	1998/09
形態種別	論文
査読	査読あり
標題	Cubic boron nitride film synthesis by reactive sputtering of pure boron target in electron cyclotron resonance plasmas
執筆形態	共著・編著（代表編著を除く）
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
掲載区分	国外
出版社・発行元	JAPAN J APPLIED PHYSICS
巻・号・頁	37(9AB),pp.L1082-L1084
著者・共著者	M Wakatsuchi,Y Takaba,Y Ueda,M Nishikawa
概要	Cubic boron nitride (c-BN) thin films are synthesized by reactive sputtering. Pure boron is used as the sputtering target, which is de-biassed in an Ar/N-2 electron cyclotron resonance plasma, Substrates are rf-biased with a frequency of 13.56 MHz. BN films with a dominant cubic phase are obtained in the cast of a high ion-to-boron flux ratio of 12 at the substrate self-bias higher than -175 V; the transferred momentum per atom is about 1260 (eV amu)(1/2), which is larger than the value predicted using the momentum transfer model for c-BN synthesis by a factor of 4. An intermediate layer between the c-BN layer and the substrate improves the adhesion of the c-BN layer and prevent a exfoliation. This intermediate layer is deposited under an Ar/N-2 gas mixing ratio of 9 without rf bias.
DOI	10.1143/jjap.37.L1082
ISSN	0021-4922
NAID	110003927691