ウエダ ヨシオ
Ueda Yoshio
上田 良夫 所属 追手門学院大学 理工学部 電気電子工学科 職種 教授 |
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言語種別 | 英語 |
発行・発表の年月 | 1998/10 |
形態種別 | 論文 |
査読 | 査読あり |
標題 | Boron ion particles sputtered from boron films deposited on graphites |
執筆形態 | 共著・編著(代表編著を除く) |
掲載誌名 | JOURNAL OF NUCLEAR MATERIALS |
掲載区分 | 国外 |
出版社・発行元 | ELSEVIER SCIENCE BV |
巻・号・頁 | 258(PART 1 A),pp.735-739 |
著者・共著者 | Y Ohtsuka,M Tsuji,Y Kitamura,Y Ueda,M Isobe,M Nishikawa |
概要 | Boron films were deposited on pyrolytic and isotropic graphites by vapor deposition at different deposition rates. The particles sputtered from these films were measured directly by the QMS during 5 keV Dg beam irradiation with a flux of 2 x 10(21) D/m(2) s. It was found that the sputtered particles were in the form of boron ion and neutral. The boron ion showed a different behavior from the neutral. The ion signal had a peak value at the beginning of each shot. It also depended on the conditions of the substrates and the deposition rate. These dependencies might be associated with the existence of oxygen on the surface. (C) 1998 Elsevier Science B.V. All rights reserved. |
DOI | 10.1016/S0022-3115(98)00253-0 |
ISSN | 0022-3115 |