ウエダ　ヨシオ   Ueda Yoshio   上田　良夫    所属   追手門学院大学  理工学部 電気電子工学科    職種   教授
言語種別	英語
発行・発表の年月	1999/07
形態種別	論文
査読	査読あり
標題	Ion bombardment effects on boron nitride film synthesis by reactive sputtering with electron cyclotron resonance plasmas
執筆形態	共著・編著（代表編著を除く）
掲載誌名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
掲載区分	国内
出版社・発行元	JAPAN J APPLIED PHYSICS
巻・号・頁	38(7B),pp.4515-4519
著者・共著者	M Wakatsuchi,Y Takaba,K Kanai,Y Ueda,M Nishikawa
概要	Boron nitride (BN) films with a high cubic phase content have been synthesized. The films are deposited by reactive sputtering of a pure baron target in electron cyclotron resonance (ECR) plasmas and ion bombardment to a substrate is enhanced by rf biassing of the substrate. A cubic phase of BN is frown over a certain threshold value of ion bombardment energy The threshold and the cubic phase content depend on the ratio of ion flux to boron atom flux to the substrate. The threshold decreases as the ratio increases; however, the cubic phase content also decreases, particularly in a high ion Aux region. BN films with a high cubic phase content show surface cracking and delamination because of the high compressive stress induced by ion bombardment. An intermediate hexagonal BN layer, of a certain thickness between layer with high cubic phase content and the substrate prevents surface cracking and improves film adhesion.
DOI	10.1143/JJAP.38.4515
ISSN	0021-4922
NAID	110003956191