ウエダ ヨシオ
Ueda Yoshio
上田 良夫 所属 追手門学院大学 理工学部 電気電子工学科 職種 教授 |
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言語種別 | 英語 |
発行・発表の年月 | 2000/12 |
形態種別 | 論文 |
査読 | 査読あり |
標題 | Mechanism of chemical sputtering of graphite under high flux deuterium bombardment |
執筆形態 | 共著・編著(代表編著を除く) |
掲載誌名 | JOURNAL OF NUCLEAR MATERIALS |
掲載区分 | 国外 |
出版社・発行元 | ELSEVIER SCIENCE BV |
巻・号・頁 | 282(2-3),pp.216-222 |
担当区分 | 筆頭著者 |
著者・共著者 | Y Ueda,T Sugai,Y Ohtsuka,M Nishikawa |
概要 | Chemical sputtering of graphite materials (isotropic graphite and carbon fiber composite) was studied by irradiation of 5 keV D-3(+) beam with a flux up to 4 x 10(21) m(-2) s(-1), which is more than one order magnitude higher than previous low flux beam experiments (<10(20) m(-2) s(-1)). The chemical sputtering yield was obtained from measurements of the released methane signal with a quadrupole mass analyser. It was found that the methane yield at peak temperatures is almost independent of flux from 5 x 10(20) to 4 x 10(21) m(-2) s(-1). Peak temperatures range between 900 and 1000 K, which is higher than those of the previous low flux experiments (<900 K, < 10(20) m(-2) s(-1)). By comparing our experimental results with calculation results based on Roth's model, the annealing effect of radiation damage to prevent methyl group formation appears to be unimportant. (C) 2000 Elsevier Science B.V. All rights reserved. |
DOI | 10.1016/S0022-3115(00)00410-4 |
ISSN | 0022-3115 |
NAID | 80012163951 |