ウエダ　ヨシオ   Ueda Yoshio   上田　良夫    所属   追手門学院大学  理工学部 電気電子工学科    職種   教授
言語種別	英語
発行・発表の年月	2001/03
形態種別	論文
査読	査読あり
標題	Cubic boron nitride film synthesis by reactive sputtering with pulsed RF substrate bias
執筆形態	共著・編著（代表編著を除く）
掲載誌名	DIAMOND AND RELATED MATERIALS
掲載区分	国外
出版社・発行元	ELSEVIER SCIENCE SA
巻・号・頁	10(3-7),pp.1380-1384
著者・共著者	M Wakatsuchi,Y Ueda,M Nishikawa
概要	Cubic boron nitride (c-BN) films are synthesized by reactive sputtering with RF biased substrate in electron cyclotron resonance (ECR) plasmas. In this study, continuous working (CW) and pulsed RF bias modes are applied for deposition and the results are compared. In the CW mode, c-BN is synthesized above a certain threshold ion energy and this energy changes with the ion to boron-atom flux ratio to the substrate. An experimental study is made in the pulsed bias mode under various conditions: the pulse period and the duty ratio. As a result in the case of the pulsed bias mode, higher ion energy is required than that in the CW mode for c-BN synthesis.
DOI	10.1016/S0925-9635(00)00553-7
ISSN	0925-9635
NAID	80012536583