ウエダ　ヨシオ   Ueda Yoshio   上田　良夫    所属   追手門学院大学  理工学部 電気電子工学科    職種   教授
言語種別	英語
発行・発表の年月	2018/08
形態種別	論文
査読	査読あり
標題	Surface morphology changes of silicon carbide by helium plasma irradiation
執筆形態	共著・編著（代表編著を除く）
掲載誌名	NUCLEAR MATERIALS AND ENERGY
出版社・発行元	ELSEVIER SCIENCE BV
巻・号・頁	16,pp.145-148
著者・共著者	N. Yamashita,K. Omori,Y. Kimura,T. Hinoki,K. Ibano,H. T. Lee,Y. Ueda
概要	Silicon carbide (SiC) and its composites are candidate materials for the blanket components and for the first wall in a fusion reactor. If the SiC is used without any armor materials for the first wall, it is exposed by helium (He) plasma as well as hydrogen plasma. Characteristic surface morphology changes are reported for various materials by He plasma exposure. Thus, we exposed SiC specimens to He or simultaneous deuterium (D) and He (D + He) plasma by various conditions and then observed surface morphology changes by SEM. As a result, needle-like structures and whiskers-like structures at the tip were formed in He plasma and D + He irradiation, while only needle-like structures were formed in D plasma. Therefore, it indicated that the effects of He were attributed to form whiskers-like structures.
DOI	10.1016/j.nme.2018.06.013
ISSN	2352-1791/2352-1791