イノウエ　リョウタロウ   井上　亮太郎    所属   追手門学院大学  理工学部 電気電子工学科    職種   准教授
言語種別	英語
発行・発表の年月	2011
形態種別	論文
査読	査読あり
標題	Enhanced Photon Generation in a Nb / n-InGaAs / p-InP Superconductor /Semiconductor-Diode Light Emitting Device
執筆形態	共著・編著（代表編著を除く）
掲載誌名	PHYSICAL REVIEW LETTERS
掲載区分	国外
出版社・発行元	AMER PHYSICAL SOC
巻・号・頁	107(15),pp.157403
著者・共著者	H. Sasakura,S. Kuramitsu,Y. Hayashi,K. Tanaka,T. Akazaki,E. Hanamura,R. Inoue,H. Takayanagi,Y. Asano,C. Hermannstaedter,H. Kumano,I. Suemune
概要	We experimentally demonstrate Cooper pairs' drastic enhancement of the band-to-band radiative recombination rate in a semiconductor. Electron Cooper pairs injected from a superconducting electrode into an active layer by the proximity effect recombine with holes injected from a p-type electrode. The recombination of a Cooper pair with p-type carriers dramatically increases the photon generation probability of a light-emitting diode in the optical-fiber communication band. The measured radiative decay time rapidly decreases with decreasing temperature below the superconducting transition temperature of the niobium electrodes. Our results indicate the possibility to open up new interdisciplinary fields between superconductivity and optoelectronics.
DOI	10.1103/PhysRevLett.107.157403
ISSN	0031-9007/1079-7114