ウエダ　ヨシオ   Ueda Yoshio   上田　良夫    所属   追手門学院大学  理工学部 電気電子工学科    職種   教授
言語種別	英語
発行・発表の年月	2012
形態種別	論文
査読	査読あり
標題	Temperature dependence for nitridation of aluminum films by sub-atmospheric pressure discharge
執筆形態	共著・編著（代表編著を除く）
掲載誌名	INTERNATIONAL SYMPOSIUM ON MATERIALS SCIENCE AND INNOVATION FOR SUSTAINABLE SOCIETY: ECO-MATERIALS AND ECO-INNOVATION FOR GLOBAL SUSTAINABILITY (ECO-MATES 2011)
掲載区分	国外
出版社・発行元	IOP PUBLISHING LTD
巻・号・頁	379
著者・共著者	A. Saikubo,Y. Ohtsuka,Y. Ueda
概要	Characteristics of aluminum (Al) films exposed to helium/nitrogen (He/N-2) mixture plasma under sub-atmospheric pressure were investigated using X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and scanning electron microscopy (SEM). After nitridation, the Al-N component became a dominant constituent element on the Al films through Al-N bonding due to exposure to He/N-2 mixture plasma. The content of the Al-N component with respect to temperature was almost constant at more than 0.6 up to 573 K. However, the Gaussian width of the Al-N component corresponding to disorder of aluminum nitride (AlN) crystal tended to become narrower with the elevation of the temperature. At a high temperature of 673 K, where the nitridation process may be easily promoted, an AlN 0002 reflection peak appeared in the XRD pattern, and crystals composed of collections of tiny white dots started to be observed in SEM images.
DOI	10.1088/1742-6596/379/1/012032
ISSN	1742-6588